參數(shù)資料
型號(hào)： DS100BR210EVK/NOPB
廠商： National Semiconductor
文件頁數(shù)： 40/43頁
文件大?。?/td> 0K
描述： EVAL KIT FOR DS100BR210
標(biāo)準(zhǔn)包裝： 1
系列： *
SNLS338E – JANUARY 2011 – REVISED FEBRUARY 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage (VDD)
-0.5V to +2.75V
Supply Voltage (VIN)
-0.5V to +4.0V
LVCMOS Input/Output Voltage
-0.5V to +4.0V
CML Input Voltage
-0.5V to (VDD+0.5)
CML Input Current
-30 to +30 mA
Junction Temperature
125°C
Storage Temperature
-40°C to +125°C
ESD Rating
HBM, STD - JESD22-A114F
> 5 kV
MM, STD - JESD22-A115-A
100 V
CDM, STD - JESD22-C101-D
1250 V
Package Thermal Resistance
θJC
3.2°C/W
θJA, No Airflow, 4 layer JEDEC
33.0°C/W
For soldering specifications: See product folder at www.national.com
(1)
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied.
Recommended Operating Conditions
(1)
Min
Typ
Max
Units
Supply Voltage (2.5V mode)
2.375
2.5
2.625
V
Supply Voltage (3.3V mode)
3.0
3.3
3.6
V
Ambient Temperature
-40
25
+85
°C
SMBus (SDA, SCL)
3.6
V
(1)
The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated
beyond such conditions. Absolute Maximum Numbers are guaranteed for a junction temperature range of -40°C to +125°C. Models are
validated to Maximum Operating Voltages only.
Electrical Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
Power Supply Current
IDD
Supply Current
TX_DIS = LOW, EQ = ON
50
63
VOD_SEL = Float ( 1000 mV)
Auto Low Power Mode
12
15
TX_DIS = LOW, MODE = 20K
mA
VID CHA and CHB = 0.0V
VOD_SEL = Float (1000 mV)
TX_DIS = HIGH (BR111)
25
35
LVCMOS DC Specifications
VIH
High Level Input Voltage
2.0
VDD
V
VIL
Low Level Input Voltage
GND
0.7
V
VOH
High Level Output
IOH = -4.0 mA
(1)
2.0
V
Voltage
VOL
Low Level Output
IOL = 4.0 mA
0.4
V
Voltage
(1)
VOH only applies to the DONE# pin; LOS, SCL, and SDA are open-drain outputs that have no internal pull-up capability. DONE# is a
full LVCMOS output with pull-up and pull-down capability
6
Copyright 2011–2013, Texas Instruments Incorporated
Product Folder Links: DS100BR111
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