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參數(shù)資料
| 型號： | DIM200BSS12-A000 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | B, 5 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 139K |
| 代理商： | DIM200BSS12-A000 |
DIM200BSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/9
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M6
Electrical connections - M6
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Creepage distance:
Al
2
O
3
Cu
20mm
Clearance:
CTI (Critical Tracking Index):
11mm
425
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
90
194
15
150
125
125
5
5
2
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
3
2.5
1.1
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|---|---|
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