參數(shù)資料
型號(hào): DIM200BSS12-A000
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: IGBT 晶體管
英文描述: 200 A, 1200 V, N-CHANNEL IGBT
封裝: B, 5 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 139K
代理商: DIM200BSS12-A000
DIM200BSS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9
Replaces February 2004 version, issue DS5693-2.0
DS5693-3.0 May 2004
DIM200BSS12-A000
Single Switch IGBT Module
FEATURES
I
10
μ
s Short Circuit Withstand
I
Non Punch Through Silicon
I
Isolated Copper Baseplate
APPLICATIONS
I
Inverters
I
Motor Controllers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200BSS12-A000 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
μ
s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200BSS12-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
*(Measured at the power busbars and not the auxiliary terminals)
1200V
2.2V
200A
400A
(typ)
(max)
(max)
Fig. 1 Single switch circuit diagram
Fig. 2 Module outline
Outline type code:
B
(See package details for further information)
2(E)
5(E
1
)
3(G
1
)
1(C)
4(C
1
)
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