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參數(shù)資料
| 型號(hào)： | DG2017DN-T1-E4 |
| 廠商： | Vishay Siliconix |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL SPDT 16QFN |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 功能： | 開關(guān) |
| 電路： | 2 x DPDT - NC/NO |
| 導(dǎo)通狀態(tài)電阻： | 3.7 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 2 V ~ 5.5 V |
| 電流 - 電源： | 1µA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-VQFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 16-QFN（4x4） |
| 包裝： | 帶卷 (TR) |
Document Number: 72228
S13-1286-Rev. C, 27-May-13
www.vishay.com
3
Vishay Siliconix
DG2017
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.4 V or 1.6 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Dynamic Characteristics
Turn-On Time
tON
(SW1, SW2)
VNO or VNC = 2 V, RL = 300 , CL = 35 pF
(fig. 1, 2)
Room
Full
62
85
91
ns
tON
(SW3, SW4)
Room
Full
46
74
79
Turn-Off Time
tON
(SW1, SW2)
Room
Full
12
35
36
tON
(SW3, SW4)
Room
Full
21
46
48
Break-Before-Make Time
td
(SW1, SW2)
Full
5
45
td
(SW3, SW4)
Full
5
26
Charge Injectiond
QINJ
(SW1, SW2)
CL = 1 nF, VGEN = 0 V, RGEN = 0
(fig. 3)
Room
2
pC
QINJ
(SW3, SW4)
1
Off-Isolationd
OIRR
(SW1, SW2)
RL = 50 , CL = 5 pF, f = 1 MHz
(fig. 4)
Room
- 68
dB
OIRR
(SW3, SW4)
- 51
Crosstalkd
XTALK
(SW1, SW2)
- 69
XTALK
(SW3, SW4)
- 51
NO, NC Off Capacitance
d
COFF
(SW1, SW2)
VIN = 0 V or V+, f = 1 MHz
Room
12
pF
COFF
(SW3, SW4)
43
Channel-On Capacitanced
CON
(SW1, SW2)
86
CON
(SW3, SW4)
283
Power Supply
Power Supply Range
V+
2
5.5
V
Power Supply Current
I+
VOE = 0 V or V+
1A
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