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參數(shù)資料
| 型號： | DG2017DN-T1-E4 |
| 廠商： | Vishay Siliconix |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SWITCH DUAL SPDT 16QFN |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 功能： | 開關(guān) |
| 電路： | 2 x DPDT - NC/NO |
| 導(dǎo)通狀態(tài)電阻： | 3.7 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 2 V ~ 5.5 V |
| 電流 - 電源： | 1µA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-VQFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 16-QFN（4x4） |
| 包裝： | 帶卷 (TR) |
www.vishay.com
2
Document Number: 72228
S13-1286-Rev. C, 27-May-13
Vishay Siliconix
DG2017
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 23.5 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Unit
Reference V+ to GND
- 0.3 to + 6
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Current (Any terminal except NO, NC or COM)
30
mA
Continuous Current (NO, NC, or COM)
± 200
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 300
Storage Temperature (D Suffix)
- 65 to 150
°C
Package Solder Reflow Conditionsd
16-pin QFN (4 mm x 4 mm)
240
Power Dissipation (Packages)b
QFN-16 (4 mm x 4 mm)
1880
mW
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.4 V or 1.6 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
Full
0
V+
V
DC Characteristics
On-Resistance
RON
(SW1, SW2)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA
Room
Full
3.2
3.7
4.3
RON
(SW3, SW4)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA
Room
Full
0.67
1.1
1.2
RON Flatness
d
RON
(SW1, SW2)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA
Room
Full
1.4
2
RON
(SW3, SW4)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA
Room
Full
0.12
0.3
RON Match
d
R
ON
(SW1, SW2)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA
Room
Full
0.3
R
ON
(SW3, SW4)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA
Room
Full
0.3
Switch Off
Leakage Current
INO(off)
INC(off)
V+ = 3.3 V
VNO, VNC = 0.3 V/3 V, VCOM = 0.3 V/3 V
Room
Full
- 0.5
5
0.5
5
nA
ICOM(off)
Room
Full
- 0.5
5
0.5
5
Channel-On
Leakage Current
ICOM(on)
V+ = 3.3 V, VNO = VNC, VCOM = 0.3 V/3 V
Room
Full
- 0.5
5
0.5
5
Digital Control
Input High Voltage
VINH
Full
1.6
V
Input Low Voltage
VINL
Full
0.4
Input Capacitance
Cin
Full
6
pF
Input Current
IINL or IINH
VIN = 0 V or V+
Full
- 1
1
A
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