| 型號(hào) | 廠商 | 描述 |
| bfr96t 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor(集電極電流75mA,射頻放大器應(yīng)用的NPN平面型晶體管) |
| bfr96t 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor |
| bfs17a 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor(集電極電流25mA,寬帶低噪聲放大器應(yīng)用的NPN平面型晶體管) |
| bfs17a 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor |
| bfs17ar 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor |
| bfs17aw 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor |
| bfs17 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor(集電極電流25mA,射頻放大器應(yīng)用的NPN平面型晶體管) |
| bfs17 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor |
| bfs17r 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor |
| bfs17w 2 3 4 5 6 7 8 9 10 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor |
| bft51f.a |
ADVANCED SEMICONDUCTOR INC | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| bft51fa |
Advanced Semiconductor, Inc. | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| bft51f |
ADVANCED SEMICONDUCTOR INC | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| bfw13 |
ADVANCED SEMICONDUCTOR INC | N-CHANNEL SILICON FET DEPLETION MODE |
| bfw43 2 3 4 5 |
意法半導(dǎo)體 | High Voltage Amplifier(硅平面外延工藝PNP晶體管(高壓放大器)) |
| bfw92a 2 3 4 5 6 7 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor(集電極電流25mA,寬帶射頻放大器應(yīng)用的NPN平面型晶體管) |
| bfw92a 2 3 4 5 6 7 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor |
| bfw92 2 3 4 5 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor(集電極電流25mA,射頻放大器應(yīng)用的NPN平面型晶體管) |
| bfw92 2 3 4 5 |
Vishay Intertechnology,Inc. | Silicon NPN Planar RF Transistor |
| bg1101f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
STANLEY ELECTRIC CO., LTD. | Single Color Right Angle Type (3.0 X 2.0 mm) |
| bg1102w 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
STANLEY ELECTRIC CO., LTD. | Outer Dimension 3.0 x 1.5 x 1.5mm |
| bg5305s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
STANLEY ELECTRIC CO., LTD. | Single Color ヵ5 Round Shape Type |
| bg5307s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
STANLEY ELECTRIC CO., LTD. | Single Color ヵ5 Round Shape Type |
| bg5351k 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
STANLEY ELECTRIC CO., LTD. | Single Color Rectangular Shape Type |
| bg7351k 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
STANLEY ELECTRIC CO., LTD. | Single Color Rectangular Shape Type |
| bgd714 2 3 4 5 6 7 8 9 |
NXP Semiconductors N.V. | 750 MHz, 20.3 dB gain power doubler amplifier |
| bgd714 2 3 4 5 6 7 8 9 |
NXP Semiconductors N.V. | Hybrid amplifier module operating with a voltage supply of 24 V (DC). |
| bgd802 2 3 4 5 6 7 8 9 10 |
NXP Semiconductors N.V. | 860 MHz, 18.5 dB gain power doubler amplifier |
| bgd802 2 3 4 5 6 7 8 9 10 |
NXP Semiconductors N.V. | Hybrid amplifier module operating at a supply voltage of 24 V (DC). |
| bgd804 2 3 4 5 6 7 8 9 10 11 |
NXP Semiconductors N.V. | 860 MHz, 20 dB gain power doubler amplifier |
| bgd804 2 3 4 5 6 7 8 9 10 11 |
NXP Semiconductors N.V. | Hybrid amplifier module operating at a voltage supply of 24 V (DC). |
| bgd812 2 3 4 5 6 7 8 9 10 |
NXP Semiconductors N.V. | 870 MHz, 18.5 dB gain power doubler amplifier |
| bgd812 2 3 4 5 6 7 8 9 10 |
NXP Semiconductors N.V. | Hybrid amplifier module operating with a voltage supply of 24 V (DC). |
| bgd814 2 3 4 5 6 7 8 9 10 |
NXP Semiconductors N.V. | 870 MHz, 20 dB gain power doubler amplifier |
| bgd814 2 3 4 5 6 7 8 9 10 |
NXP Semiconductors N.V. | Hybrid amplifier module operating with a voltage supply of 24 V (DC). |
| bgd816l 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 860 MHz, 21.5 dB gain power doubler amplifier |
| bgd816l 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | Hybrid amplifier module operating with a voltage supply of 24 V (DC). |
| bgd885 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 860 MHz, 17 dB gain power doubler amplifier |
| bgd885 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | Hybrid amplifier module for CATV/MATV systems operating over a frequency range of 40 to 860 MHz at a voltage supply of 24 V (DC). |
| bgo827 2 3 4 5 6 7 8 9 10 11 |
NXP Semiconductors N.V. | 870 MHz optical receivers |
| bgo827 2 3 4 5 6 7 8 9 10 11 |
NXP Semiconductors N.V. | 870 MHz optical receivers |
| bgr269 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 200 MHz, 35 dB gain reverse amplifier |
| bgr269 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 200 MHz, 35 dB gain reverse amplifier |
| bgy66b 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 120 MHz, 25 dB gain reverse amplifier |
| bgy66b 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 120 MHz, 25 dB gain reverse amplifier |
| bgy67a 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 200 MHz, 24 dB gain reverse amplifier |
| bgy67a 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 200 MHz, 24 dB gain reverse amplifier |
| bgy67 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 200 MHz, 22 dB gain reverse amplifier |
| bgy67 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 200 MHz, 22 dB gain reverse amplifier |
| bgy68 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 75 MHz, 30 dB gain reverse amplifier |