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參數(shù)資料
| 型號： | CY2037AWAF |
| 英文描述： | Crystal Oscillator |
| 中文描述： | 晶體振蕩器 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 208K |
| 代理商： | CY2037AWAF |
CY2037
5
Absolute Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Supply Voltage–0.5 to +7.0V
Input Voltage–0.5V to V
DD
+0.5
Storage Temperature (Non-Condensing) ...55
°
C to +150
°
C
Junction Temperature...................................–40
°
C to +100
°
C
Static Discharge Voltage ............................................ >2000V
(per MIL-STD-883, Method 3015)
Operating Conditions
Parameter
V
DD
Description
Min.
2.7
4.5
–40
Max.
3.6
5.5
+100
Unit
V
V
°
C
Supply Voltage (3.3V)
Supply Voltage (5.0V)
Operating Temperature, Junction
Max. Capacitive Load on outputs for TTL levels
V
DD
= 4.5–5.5V, Output frequency = 1–40 MHz
V
DD
= 4.5–5.5V, Output frequency = 40–133 MHz
Max. Capacitive Load on outputs for CMOS levels
V
DD
= 4.5–5.5V, Output frequency = 1–66.6MHz
V
DD
= 4.5–5.5V, Output frequency = 66.6–133MHz
V
DD
= 3.0–3.6V, Output frequency = 1–40 MHz
V
DD
= 3.0–3.6V, Output frequency = 40–100 MHz
V
DD
= 2.7–3.0V, Output frequency = 1–66 MHz
Reference Frequency, input crystal. Fundamental tuned crystals only.
T
AJ
[2]
C
TTL
50
25
pF
pF
C
CMOS
50
25
30
15
15
30
pF
pF
pF
pF
pF
MHz
X
REF
10
Electrical Characteristics
Over the Operating Range (Part was characterized in a 20 pin SOIC package with external
crystal, Electrical Characteristics may change with other package types)
Parameter Description
V
IL
Test Conditions
V
DD
= 4.5–5.5V
V
DD
= 2.7–3.6V
V
DD
= 4.5–5.5V
V
DD
= 2.7–3.6V
V
DD
= 4.5–5.5V, I
OL
= 16 mA
V
DD
= 2.7–3.6V, I
OL
= 8 mA
V
DD
= 4.5–5.5V, I
OH
= –16 mA
V
DD
= 2.7–3.6V, I
OH
= –8 mA
V
DD
= 4.5–5.5V, I
OH
= –8 mA
Min.
Typ.
Max.
0.8
0.2V
DD
Unit
V
V
V
V
V
V
V
V
V
Low-level Input Voltage
V
IH
High-level Input Voltage
2.0
0.7V
DD
V
OL
Low-level Output Voltage
0.4
0.4
V
OHCMOS
High-level Output Voltage,
CMOS levels
High-level Output Voltage,
TTL levels
Input Low Current
Input High Current
Power Supply Current,
Unloaded
Stand-by current
Input Pull-Up Resistor
V
DD
–0.4
V
DD
–0.4
2.4
V
OHTTL
I
IL
I
IH
I
DD
V
IN
= 0V
V
IN
= V
DD
V
DD
= 4.5–5.5V, Output frequency <= 133MHz
V
DD
= 2.7–3.6V, Output frequency <= 100 MHz
V
DD
= 2.7-3.6V
V
DD
= 4.5–5.5V, V
IN
= 0V
V
DD
= 4.5–5.5V, V
IN
= 0.7V
DD
V
DD
=5.0
10
5
45
25
50
8.0
200
μ
A
μ
A
mA
mA
μ
A
M
k
μ
A
I
DDS
R
UP
10
3.0
100
20
1.1
50
I
OE_CLKOUT
CLKOUT Pulldown current
Note:
2.
This product is sold in die form so operating conditions are specified for the die, or junction temperature
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