參數(shù)資料
型號: CXK5T81000ATN-10LLX
元件分類: SRAM
英文描述: 128K X 8 STANDARD SRAM, 100 ns, PDSO32
封裝: 8 X 13.40 MM, PLASTIC, TSOP-32
文件頁數(shù): 3/10頁
文件大?。?/td> 169K
代理商: CXK5T81000ATN-10LLX
– 3 –
CXK5T81000ATN/AYN
Input leakage current
Output leakage current
Operating power supply
current
I
LI
I
LO
I
CC1
V
IN
= GND to V
CC
CE1 = V
IH
or CE2 = V
IL
or
OE = V
IH
or WE = V
IL
V
I/O
= GND to V
CC
CE1 = V
IL
, CE2 = V
IH
V
IN
= V
IH
or V
IL
I
OUT
= 0mA
Min. cycle
duty = 100%
I
OUT
= 0mA
Cycle time 1μs
duty = 100%
I
OUT
= 0mA
CE1
0.2V
CE2
Vcc – 0.2V
V
IL
0.2V
V
IH
Vcc – 0.2V
10LLX
12LLX
–25 to +85°C
–25 to +70°C
+25°C
–1
–1
5
10
0.48
0.12
28
14
1.4
μA
mA
1
25
2
25
+1
+1
3
35
3
35
μA
μA
mA
mA
mA
Item
Symbol
Min.
Typ.
1
Max.
Unit
Test conditions
Electrical Characteristics
DC Characteristics
(V
CC
= 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)
1
V
CC
= 3.3V, Ta = 25°C
2
I
CC2
= 30mA for 3.3V operation (V
CC
= 3.3V ± 0.3V)
3
I
CC2
= 40mA for 3.3V operation (V
CC
= 3.3V ± 0.3V)
Average operating current
Output high voltage
Output low voltage
Standby current
I
CC2
I
CC3
I
SB1
I
SB2
V
OH
V
OL
CE1 = V
IH
or CE2 = V
IL
I
OL
= 2.0mA
2.4
0.4
V
V
I
OH
= –2.0mA
CE2
0.2V
CE1
Vcc – 0.2V
or
{
CE2
Vcc – 0.2V
Input capacitance
I/O capacitance
Item
Symbol Test conditions
Min.
Typ.
Max.
Unit
C
IN
C
I/O
8
10
pF
pF
V
IN
= 0V
V
I/O
= 0V
I/O capacitance
(Ta = 25°C, f = 1MHz)
Note)
This parameter is sampled and is not 100% tested.
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