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| 型號： | CLA70000HG28 |
| 英文描述： | ASIC |
| 中文描述： | 專用集成電路 |
| 文件頁數(shù)： | 4/17頁 |
| 文件大?。?/td> | 243K |
| 代理商： | CLA70000HG28 |
POWER SUPPLY DISTRIBUTION
I
Three power rings for good noise immunity
I
Optimized for efficient routing
I
User defined placement of Power and Ground pads
The power supply distribution scheme for the CLA70000
arrays (fig.3) has the flexibility to meet varying applications
needs. Three separate power rings are used, one each for the
internal core logic, intermediate buffer cells, and large output
driver cells. Noise generated in the low impedance output
drivers is isolated from the core logic and buffer areas. The
distribution of the supply rails can be automatically positioned
by the layout software which allows greater design flexibility
and optimisation.
The power supply rings may be connected either to
separate pad locations or combined at a single location. All
I/O cell pads may be configured as either power or ground,
giving complete flexibility to the designer.
PROCESS TECHNOLOGY
I
Advanced 1 micron twin well process with epitaxial
substrate
I
Class 10 six inch wafer fabrication facility
I
High density low power process
Fig 3. Power Supply Organisation
RECOMMENDED MAXIMUM OPERATING LIMITS
Parameter
Min Max Units
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Commercial Grade
Industrial Grade
Military Grade
3.0
Vss
Vss
5.5
Vdd
Vdd
V
V
V
0
-40
-55
70
85*
125**
°
C
°
C
°
C
* 125
°
C maximum junction temperature for plastic devices.
**Subject to a maximum junction temperature of 150
°
C for
ceramic devices.
ABSOLUTE MAXIMUM RATINGS
Parameter
Min Max Units
Supply Voltage
Input Voltage
Output Voltage
ESD protection
Current per pad
Storage Temperature
Ceramic
Plastic
-0.5
-0.5
-0.5
2.0
7.0
Vdd + 0.5
Vdd + 0.5
V
V
V
K Volts
mA
100
-65
-40
150
125
°
C
°
C
Operation outside these absolute maximum ratings may
permanently damage device characteristics and may affect
reliability.
VSS } Supply to
VDD } Intermediate
Buffers
VDD } Supply to
VSS } I/O Buffers
Supply to
Core Logic
The CLA70000 arrays are built using the GEC Plessey 1
micron drawn CMOS process, which is the third generation of
our ‘V’ series process family. Manufacture is at GPS’s
Class10, 6-inch fabrication facility. The process is a twin well,
self aligned oxide-isolated technology on an epitaxial
substrate, with an effective channel length of 0.8 micron,
giving low defect density, high reliability, and inherently low
power dissipation. The process has excellent immunity to
latchup, and ESD, and exhibits stable performance
characteristics ideal for all commercial, industrial and military
applications.
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PDF描述 |
|---|---|
| CLA70000HG44 | ASIC |
| CLA70000HP28 | ASIC |
| CLA70000HP44 | ASIC |
| CLA70000LC28 | ASIC |
| CLA70000LC44 | ASIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CLA70000HG44 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASIC |
| CLA70000HP28 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASIC |
| CLA70000HP44 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASIC |
| CLA70000LC28 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASIC |
| CLA70000LC44 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASIC |
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