參數(shù)資料
型號: CIL591
英文描述: TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 800MA I(C) | TO-105
中文描述: 晶體管|晶體管|叩| 15V的五(巴西)總裁| 800mA的一(c)|至105
文件頁數(shù): 2/2頁
文件大小: 15K
代理商: CIL591
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
175
175
5.0
50
100
80
90
100
100
50
300
0.3
0.5
0.8
0.9
.65
200
10
75
200
1200
3.0
320
200
80
3.0
400
600
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
BV
CEO
BV
CBO
BV
EBO
I
EBO
I
CBO
Collector
Emitter Breakdown Voltage
1
Collector
Base Breakdown Voltage
Emitter
Base Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE(sat)
Collector
Emitter Saturation Voltage
1
V
BE(sat)
Base
Emitter Saturation Voltage
f
t
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
h
re
h
fe
h
oe
Input Impedance
Voltage Feedback Ratio
Small Siganl Current Gain
Ourput Admittance
NF
t
on
t
off
Turn
On Time
Turn
Off Time
I
C
= 10mA
I
C
= 100
m
A
I
C
= 0
V
BE
= 3.0V
V
CB
= 100V
I
B
= 0
I
E
= 0
I
E
= 10
m
A0
I
C
= 0
I
E
= 0
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 50mA
I
C
= 150mA
I
C
= 10mA
I
C
= 50mA
I
C
= 10mA
I
C
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
I
B
= 1mA
I
B
= 5mA
I
B
= 1mA
I
B
= 5mA
V
CE
= 20V
I
C
= 50mA
f = 100MHz
I
E
= 0
f = 100kHz
I
C
= 0
f = 100kHz
V
CB
= 20V
V
BE
= 1.0V
V
CE
= 10V
I
C
= 10mA
f = 1kHz
V
CE
= 10V
R
S
= 1.0
W
I
C
= 0.5mA
f = 1kHz
V
CC
= 100V
I
C
= 50mA I
B1
= I
B2
=5mA
V
BE
= 4.0V
V
nA
-
V
V
MHz
pF
pF
W
x10
-4
m
mhos
dB
ns
Prelim. 2/00
2N3637CSM
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise stated)
1) Pulse test : Pulse Width < 300
m
s ,Duty Cycle < 2%
SWITCHING CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
相關(guān)PDF資料
PDF描述
CIL592 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 800MA I(C) | TO-105
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2N3637 GENERAL PURPOSE TRANSISTOR (PNP SILICON)
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