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參數(shù)資料
| 型號(hào)： | 2N3637 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP SILICON AMPLIFIER TRANSISTOR |
| 中文描述： | 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 20K |
| 代理商： | 2N3637 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/99
2N3637
PNP SILICON TRANSISTOR
FEATURES
High Voltage Switching
Low Power Amplifier Applications
Hermetic TO39 Package
APPLICATIONS:
General Purpose
High Speed Saturated Switching
V
CEO
V
CBO
V
EBO
I
C
P
D
Collector – Emitter Voltage
Collector – Base Voltage
Emmiter – Base Voltage
Collector Current
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
P
D
T
J
, T
STG
175V
175V
5V
1A
1W
5.71mW/ °C
5W
28.6mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base
PIN 3 – Collector
( 00 . 8 9
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5 °
1
2
3
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