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參數(shù)資料
| 型號： | 2N3637 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SILICON AMPLIFIER TRANSISTOR |
| 中文描述： | 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | 2N3637 |
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
175
175
5.0
50
100
80
90
100
100
50
300
0.3
0.5
0.8
0.9
.65
200
10
75
200
1200
3.0
320
200
80
3.0
400
600
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
BV
CEO
BV
CBO
BV
EBO
I
EBO
I
CBO
Collector–Emitter Breakdown Voltage
1
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE(sat)
Collector – Emitter Saturation Voltage
1
V
BE(sat)
Base – Emitter Saturation Voltage
f
t
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
h
re
h
fe
h
oe
Input Impedance
Voltage Feedback Ratio
Small Siganl Current Gain
Ourput Admittance
NF
t
on
t
off
Turn–On Time
Turn–Off Time
I
C
= 10mA
I
C
= 100
m
A
I
C
= 0
V
BE
= 3.0V
V
CB
= 100V
I
B
= 0
I
E
= 0
I
E
= 10
m
A0
I
C
= 0
I
E
= 0
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 50mA
I
C
= 150mA
I
C
= 10mA
I
C
= 50mA
I
C
= 10mA
I
C
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
I
B
= 1mA
I
B
= 5mA
I
B
= 1mA
I
B
= 5mA
V
CE
= 20V
I
C
= 50mA
f = 100MHz
I
E
= 0
f = 100kHz
I
C
= 0
f = 100kHz
V
CB
= 20V
V
BE
= 1.0V
V
CE
= 10V
I
C
= 10mA
f = 1kHz
V
CE
= 10V
R
S
= 1.0
W
I
C
= 0.5mA
f = 1kHz
V
CC
= 100V
I
C
= 50mA I
B1
= I
B2
=5mA
V
BE
= 4.0V
V
nA
-
V
V
MHz
pF
pF
W
x10
-4
—
m
mhos
dB
ns
Prelim. 7/99
2N3637
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300
m
s ,Duty Cycle < 2%
SWITCHING CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
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| 2N3637L | PNP SILICON AMPLIFIER TRANSISTOR |
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| 2N3637 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
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