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參數(shù)資料
| 型號： | CAT93C57ZD4I-1.8 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | PROM |
| 英文描述： | 128 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
| 封裝： | 3 X 3 MM, LEAD AND HALOGEN FREE, TDFN-8 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 80K |
| 代理商： | CAT93C57ZD4I-1.8 |
8
93C46/56/57/66/86
Doc. No. 1023, Rev. J
Erase
Upon receiving an ERASE command and address, the
CS (Chip Select) pin must be deasserted for a minimum
of tCSMIN. The falling edge of CS will start the self clocking
clear cycle of the selected memory location. The clocking
of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of
the CAT93C46/56/57/66/86 can be determined by
selecting the device and polling the DO pin. Once
cleared, the content of a cleared location returns to a
logical “1” state.
Erase/Write Enable and Disable
The CAT93C46/56/57/66/86 powers up in the write
disable state. Any writing after power-up or after an
EWDS (write disable) instruction must first be preceded
by the EWEN (write enable) instruction. Once the write
instruction is enabled, it will remain enabled until power
to the device is removed, or the EWDS instruction is
sent. The EWDS instruction can be used to disable all
CAT93C46/56/57/66/86 write and clear instructions,
and will prevent any accidental writing or clearing of the
device. Data can be read normally from the device
regardless of the write enable/disable status.
Erase All
Upon receiving an ERAL command, the CS (Chip Select)
pin must be deselected for a minimum of tCSMIN. The
falling edge of CS will start the self clocking clear cycle
of all memory locations in the device. The clocking of the
SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the
CAT93C46/56/57/66/86 can be determined by selecting
the device and polling the DO pin. Once cleared, the
contents of all memory bits return to a logical “1” state.
Write All
Upon receiving a WRAL command and data, the CS
(Chip Select) pin must be deselected for a minimum of
tCSMIN. The falling edge of CS will start the self clocking
data write to all memory locations in the device. The
clocking of the SK pin is not necessary after the device
has entered the self clocking mode. (Note 1.) The ready/
busy status of the CAT93C46/56/57/66/86 can be
determined by selecting the device and polling the DO
pin. It is not necessary for all memory locations to be
cleared before the WRAL command is executed.
93C46/56/57/66/86 F06
Figure 4. Erase Instruction Timing
SK
CS
DI
DO
STANDBY
HIGH-Z
1
AN
AN-1
BUSY
READY
STATUS VERIFY
tSV
tHZ
tEW
tCS
11
A0
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PDF描述 |
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| CM42-67025L-25 | 8K X 16 DUAL-PORT SRAM, 25 ns, CQCC84 |
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| CAT93C57V | 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT93C57ZD4I-GT2E | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:2K-Bit Microwire Serial EEPROM |
| CAT93C57ZD4I-GT3E | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:2K-Bit Microwire Serial EEPROM |
| CAT93C57ZD4IT2E | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:2K-Bit Microwire Serial EEPROM |
| CAT93C57ZD4IT3E | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:2K-Bit Microwire Serial EEPROM |
| CAT93C66J | 功能描述:電可擦除可編程只讀存儲器 (512x8) (256x16) 4K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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