參數(shù)資料
型號(hào)： C1815
英文描述： NPN SILICON TRANSISTOR
中文描述： NPN硅晶體管
文件頁數(shù)： 2/2頁
文件大?。?/td> 61K
代理商： C1815
UTC 2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-006,A
CLASSIFICATION OF hFE1
RANK
RANGE
TYPICAL CHARACTERISTIC CURVES
Y
G
L
120-240
200-400
350-700
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
I
0
4
8
12
16
20
0
20
40
60
80
100
Fig.2 DC current Gain
Ic,Collector current (mA)
H
F
,
102
101
100
103
103
102
101
100
101
V
CE
=6V
Fig.3 Base-Emitter on Voltage
101
100
101
102
I
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
V
CE
=6V
Ic,Collector current (mA)
103
102
101
100
101
S
101
102
103
104
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
100
101
102
103
C
p
T
(
100
101
102
V
CE
=6V
Collector-Base voltage (V)
C
100
101
102
100
101
102
103
f=1MHz
I
E
=0
I
B
=50
μ
A
I
B
=100
μ
A
I
B
=150
μ
A
I
B
=200
μ
A
I
B
=250
μ
A
I
B
=300
μ
A
101
101
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