參數(shù)資料
型號： C1815
廠商： Toshiba Corporation
英文描述： Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)
中文描述： 硅npn型Epitaxail類型（通用音頻放大器應(yīng)用）
文件頁數(shù)： 1/2頁
文件大?。?/td> 61K
代理商： C1815
UTC 2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-006,A
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter voltage:
BV
CEO
=50V
*Collector current up to 150mA
* High hFE linearity
*complimentary to 2SA1015
TO-92
1
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25
°
C
)
Collector current
Base current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
Parameter
Symbol
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
DC current gain(note)
h
FE1
h
FE2
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
V
BE
(sat)
Current gain bandwidth product
Output capacitance
Cob
Noise Figure
NF
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
I
B
T
j
T
STG
RATING
60
50
5
400
150
50
125
-55 ~ +150
UNIT
V
V
V
mW
mA
mA
°
C
°
C
Test conditions
V
CB
=60V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=6V,Ic=2mA
V
CE
=6V,Ic=150mA
Ic=100mA,I
B
=10mA
Ic=100mA,I
B
=10mA
V
CE
=10V,Ic=50mA
V
CB
=10V,I
E
=0,f=1MHz
Ic=-0.1mA,V
CE
=6V
R
G
=10k
,f=100Hz
MIN
70
25
80
TYP
MAX
100
100
700
UNIT
nA
nA
0.1
2.0
1.0
0.25
1.0
3.0
1.0
V
V
f
T
MHz
pF
dB
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