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參數(shù)資料
| 型號： | BZV37 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Bidirectional voltage regulator diode(雙向穩(wěn)壓二極管) |
| 中文描述： | 40 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-34 |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 24K |
| 代理商： | BZV37 |
1996 Apr 26
2
Philips Semiconductors
Product specification
Bidirectional voltage regulator diode
BZV37
FEATURES
Low total power dissipation:
max. 400 mW
Working voltage: nom. 6.5 V
Non-repetitive peak reverse power
dissipation: max. 40 W
Bidirectional.
APPLICATIONS
Voltage stabilizer and transient
protection element.
DESCRIPTION
Low-power voltage regulator diode in an hermetically sealed leaded glass
SOD68 (DO-34) package.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
The diode is type branded.
handbook, halfpage
MAM247
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
Z
I
ZSM
continuous working current
non-repetitive peak reverse current
50
7
mA
A
t = 30 s; t
1
= 8
μ
s; t
2
= 20
μ
s;
T
j
= 25
°
C prior to surge; see Fig.3
t = 30 s; t
1
= 10
μ
s; t
2
= 1000
μ
s;
T
j
= 25
°
C prior to surge; see Fig.3
T
amb
≤
25
°
C
t
p
= 100
μ
s square wave; T
j
= 25
°
C
prior to surge; see Fig.2
2
A
P
tot
P
ZSM
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
400
40
mW
W
T
stg
T
j
65
+200
200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
NOM.
MAX.
UNIT
V
Z
V
(CL)R
working voltage
clamping voltage
I
Ztest
= 5 mA
I
ZSM
= 7 A; t
1
= 8
μ
s; t
2
= 20
μ
s
I
ZSM
= 2 A; t
1
= 10
μ
s;
t
2
= 1000
μ
s
I
Ztest
= 5 mA
I
Ztest
= 5 mA
V
R
= 0 V
V
R
= 4 V
V
R
= 4 V; T
j
= 150
°
C
V
R
= 2 V
6.2
6.5
6.8
25
15
V
V
V
r
diff
S
Z
C
d
I
R
differential resistance
temperature coefficient
diode capacitance
reverse current
20
%/K
pF
μ
A
μ
A
μ
A
0.1
150
10
30
3
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