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參數(shù)資料
| 型號： | BYV32E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% |
| 中文描述： | 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BYV32E |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 150 V/ 200 V
V
F
≤
0.85 V
I
O(AV)
= 20 A
I
RRM
= 0.2 A
t
rr
≤
25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV32E / BYV32EB
-150
150
-200
200
V
RRM
Peaqk repetitive reverse
voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave;
δ
= 0.5;
(both diodes conducting)
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
V
R
I
O(AV)
-
-
-
150
150
200
200
V
V
A
20
T
≤
115 C
I
FRM
-
20
A
T
≤
115 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
I
FSM
-
-
125
137
A
A
I
RRM
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
1 It is not possible to make connection to pin 2 of the SOT404 package
-
0.2
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
stg
T
j
-40
-
150
150
C
C
k
a1
1
a2
3
2
1
3
tab
2
1 2 3
tab
July 1998
1
Rev 1.200
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| BYV32EB | Rectifier diodes ultrafast, rugged |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYV32E-100 | 制造商:NXP Semiconductors 功能描述:Rectifier diode,BYV32E TO220AB 20A 150V |
| BYV32E-100,127 | 功能描述:整流器 RAIL REC-DD RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYV32E-100127 | 制造商:NXP Semiconductors 功能描述: |
| BYV32E150 | 制造商:PHILIPS 功能描述:* |
| BYV32E-150 | 功能描述:整流器 RAIL REC-EPI RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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