參數(shù)資料
型號: BYV32-150SMD
英文描述: 1.5 A low drop positive voltage regulator adjustable and fixed
中文描述: 雙共陰極快恢復整流
文件頁數(shù): 1/6頁
文件大?。?/td> 34K
代理商: BYV32-150SMD
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV32 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivatedhigh efficiency dual
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits
in
general
conduction and switching losses are
essential.
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
BYV32-
100
100
150
150
200
200
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
V
V
F
I
O(AV)
0.85
20
0.85
20
0.85
20
V
A
where
low
t
rr
25
25
25
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-150
150
150
150
20
UNIT
-100
100
100
100
-200
200
200
200
V
RRM
V
RWM
V
R
I
O(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Output current (both diodes
conducting)
1
-
-
-
-
V
V
V
A
square wave
δ
= 0.5; T
mb
115 C
sinusoidal
a = 1.57; T
mb
118 C
-
18
A
I
O(RMS)
I
FRM
RMS forward current
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
-
28
20
A
A
T
115 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t = 10 ms
I
FSM
-
-
125
137
A
A
I
2
t
T
stg
T
j
I
2
t for fusing
Storage temperature
Operating junction temperature
-
78
150
150
A
2
s
C
C
-40
-
1 2 3
tab
k
a1
a2
1
Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
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