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參數(shù)資料
| 型號： | BUZ11A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 50V-0.045Ω-26A -TO-220 STripFETTM Power MOSFET(功率MOSFET) |
| 中文描述： | N溝道50V -0.045Ω- 26A條至220 STripFETTM功率MOSFET（功率MOSFET的） |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | BUZ11A |
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BUZ11A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ11ACHIP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | CHIP |
| BUZ11AL | 制造商:Siemens 功能描述:MOSFET Transistor, N-Channel, TO-220AB |
| BUZ11CHIP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | CHIP |
| BUZ11FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 21A I(D) | TO-220VAR |
| BUZ11-NR4941 | 功能描述:MOSFET N-CH 50V 30A TO-220AB 制造商:on semiconductor 系列:- 包裝:管件 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:50V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:30A（Tc） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:10V 不同 Id 時(shí)的 Vgs（th）（最大值）:4V @ 1mA Vgs（最大值）:±20V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:2000pF @ 25V FET 功能:- 功率耗散（最大值）:75W（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:40 毫歐 @ 15A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 供應(yīng)商器件封裝:TO-220-3 封裝/外殼:TO-220-3 標(biāo)準(zhǔn)包裝:800 |
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