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參數(shù)資料
| 型號(hào)： | BUL65A |
| 英文描述： | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7A I(C) | TO-251AA |
| 中文描述： | 晶體管|晶體管|叩| 300V五（巴西）總裁| 7A條一（c）|至251AA |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 32K |
| 代理商： | BUL65A |
BUL65A
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
Parameter
ELECTRICAL CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)*
V
BE(sat)*
f
t
C
ob
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Transition Frequency
Output Capacitance
300
600
10
10
100
100
10
100
20
25
5
4
30
50
9
8
.07
0.2
0.4
0.9
1.1
0.1
0.5
0.8
1.1
1.2
20
30
V
μ
A
μ
A
μ
A
—
V
V
MHz
pF
I
C
= 10mA
I
C
= 1mA
I
E
= 1mA
V
CB
= 600V
T
C
= 125°C
V
CE
= 290V
I
B
= 0
V
EB
= 9V
I
C
= 0
I
C
= 0.1A
I
C
= 1A
I
C
= 4A
T
C
= 125°C
V
CE
= 5V
V
CE
= 5V
V
CE
= 1V
T
C
= 125°C
I
B
= 0.2A
I
B
= 0.4A
I
B
= 0.8A
I
B
= 0.2A
I
B
= 0.8A
I
C
= 1A
I
C
= 2A
I
C
= 4A
I
C
= 1A
I
C
= 4A
I
C
= 0.2A
V
CB
= 10V
V
CE
= 4V
f = 1MHz
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
* Pulse test t
p
= 300
μ
s ,
δ
< 2%
DYNAMIC CHARACTERISTICS
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