參數(shù)資料
型號: BUK9628-55
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶體管邏輯電平FET)
中文描述: 40 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SOT-404, 3 PIN
文件頁數(shù): 5/8頁
文件大小: 68K
代理商: BUK9628-55
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9628-55
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 40 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 40 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
0.5
1
1.5
2
2.5
3
1E-05
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
0
0.5
1
1.5
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25
0.01
0.1
1
10
100
0
.5
1
1.5
2
2.5
3
T
VDS/V
Ciss
Crss
20
40
60
80
100
Tmb / C
120
140
160
180
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
5
10
15
20
25
30
0
1
2
3
4
5
6
VGS/V
QG/nC
VDS = 14V
VDS = 44V
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
April 1998
5
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK9635-56 TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶體管邏輯電平FET)
BUK9675-55 TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶體管邏輯電平FET)
BUK9735-55A TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-220F
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BUK9775-56 TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶體管邏輯電平FET)
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