參數(shù)資料
型號(hào)： BUK9624-56
廠商： NXP Semiconductors N.V.
英文描述： TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET)
中文描述： TrenchMOS（商標(biāo)）場效應(yīng)晶體管邏輯電平（TrenchMOS（商標(biāo)）晶體管邏輯電平場效應(yīng)管）
文件頁數(shù)： 2/8頁
文件大小： 68K
代理商： BUK9624-56
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9624-55
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
1
0.5
-
-
-
-
-
10
TYP.
-
-
1.5
-
-
0.05
-
0.02
MAX.
-
-
2
-
2.3
10
500
1
10
-
UNIT
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
μ
A
μ
A
μ
A
μ
A
V
T
j
= 175C
I
GSS
Gate source leakage current
V
GS
=
±
5 V; V
DS
= 0 V
T
j
= 175C
±
V
(BR)GSS
Gate-source breakdown
voltage
Drain-source on-state
resistance
I
G
=
±
1 mA;
-
R
DS(ON)
V
GS
= 5 V; I
D
= 25 A
-
-
19
-
24
50
m
m
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
15
-
-
-
-
-
-
-
-
TYP.
40
1500
300
150
30
80
95
40
2.5
MAX.
-
2000
360
200
45
130
135
55
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 25 A;
V
= 5 V; R
= 10
Resistive load
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
45
UNIT
A
-
-
-
-
-
-
160
1.2
-
-
-
A
V
I
F
= 25 A; V
GS
= 0 V
I
F
= 40 A; V
GS
= 0 V
I
F
= 40 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.95
1.0
40
0.07
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
ns
μ
C
April 1998
2
Rev 1.000
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