參數(shù)資料
型號(hào)： BUK9120-48TC
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes(帶溫度感應(yīng)二極管的功率MOS鉗位電壓邏輯電平場(chǎng)效應(yīng)管)
中文描述： 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 3/9頁(yè)
文件大小： 85K
代理商： BUK9120-48TC
Philips Semiconductors
Product specification
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
BUK9120-48TC
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(CL)DSR
Drain source clamp voltage
(peak value)
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
R
= 10 k
; I
= 10 A;
-55 < T
j
< 175C
V
DS
= 25 V; I
D
= 10 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
40
TYP.
45
MAX.
55
UNIT
V
20
-
-
-
-
-
-
-
53
2200
400
215
12
55
60
45
-
S
pF
pF
pF
μ
s
μ
s
μ
s
μ
s
nH
2900
500
300
18
80
85
60
V
DD
= 30 V; I
D
= 25 A;
V
GS
= 5 V; R
G
= 10 k
;
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
-
2.5
-
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
52
UNIT
A
-
I
F
= 20 A ; V
GS
= 0 V
I
F
= 40 A ; V
GS
= 0 V
-
-
-
-
208
1.2
-
A
V
V
0.95
1
CLAMPED ENERGY LIMITING VALUE
SYMBOL
W
DSRS
PARAMETER
Non-repetitive drain-source
clamped inductive turn off
energy
CONDITIONS
T
j
= 25C prior to clamping;
I
D
= 20 A; V
< 16 V; V
= 5 V;
R
G
= 10 k
; inductive load
MIN.
-
MAX.
450
UNIT
mJ
February 1998
3
Rev 1.100
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