參數(shù)資料
型號： BUK9120-48TC
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes(帶溫度感應(yīng)二極管的功率MOS鉗位電壓邏輯電平場效應(yīng)管)
中文描述： 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/9頁
文件大?。?/td> 85K
代理商： BUK9120-48TC
Philips Semiconductors
Product specification
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
BUK9120-48TC
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge voltage, Human body model (100pF,1.5K
)
pins 1,3,5
-
2
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.29
UNIT
K/W
R
th j-a
minimum footprint,
FR4 board
-
50
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DG
Drain-gate zener voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
250uA; -55C < T
< 175C
V
DS
= V
; I
D
= 1 mA;
T
j
= 175C
T
j
= -55C
V
DS
= +35 V; V
GS
= 0 V;
T
j
=175 C
MIN.
38
1.0
0.5
-
-
-
TYP.
43
1.5
-
-
0.1
-
MAX.
UNIT
V
V
V
V
μ
A
μ
A
2.0
-
2.3
100
250
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
V
DS
= +15 V; V
GS
= 0 V;
T
j
=175 C
-
-
0.004
-
2
μ
A
μ
A
250
I
GSS
Gate source leakage current
V
GS
=
±
5 V; V
DS
= 0 V;
T
=175 C
-
-
0.02
-
-
1
10
-
μ
A
μ
A
V
±
V
(BR)GSS
Gate source breakdown voltage
±
1 mA;
10
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 5 V; I
D
= 20 A
T
j
=175 C
-
-
16
-
20
42
m
m
V
mV
V
F
Forward voltage, temperature
sense diodes
Negative temperature
coefficient, temperature sense
diodes from 25 C to 140 C
Forward voltage hysteresis;
temperature sense diodes
I
F
= 250 uA;
685
710
735
-S
F
I
F
= 250 uA
1.26
1.4
1.54
mV/K
V
HYS
I
F
= 125 uA to 250uA
25
50
mV
February 1998
2
Rev 1.100
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