參數(shù)資料
型號: BUK856-800
廠商: NXP Semiconductors N.V.
英文描述: Insulated Gate Bipolar Transistor IGBT
中文描述: 絕緣柵雙極晶體管IGBT的
文件頁數(shù): 5/7頁
文件大?。?/td> 60K
代理商: BUK856-800
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
Fig.13. Typical Switching Times vs. R
conditions: I
C
= 12 A; V
CL
= 500 V; T
j
= 125 C
Fig.14. Typical Switching Times vs. I
conditions: V
CL
= 500 V; R
G
= 25
; T
j
= 125C
Fig.15. Test circuit for inductive load switching times
Fig.16. Typical Energy loss at turn-off vs. R
conditions: I
C
= 12 A; V
CL
= 500 V; T
j
= 125 C
Fig.17. Typical Energy loss at turn-off vs. I
conditions: V
CL
= 500 V; R
= 25
; T
j
= 125C;
parameter V
CL
Fig.18. Inductive Load Switching Times definitions.
1
100
Rg / Ohm
t / ns
BUK8Y6-800A
10000
1000
100
10
10
1000
td(off)
tf
1
100
E(off) / mJ
BUK8Y6-800A
4
3
2
1
0
Rg / Ohm
10
1000
0
20
40
IC / A
E(off) / mJ
BUK8Y6-800A
4
3
2
1
0
400
300
VCL / V = 500
10
30
0
20
IC / A
t / ns
BUK8Y6-800A
500
400
300
200
100
0
td(off)
tf
10
30
: adjust for correct Ic
VCC = VCL
Lc
D.U.T.
R
0V
tp
0R1
G
VGE
IC measure
tr
td(on)
tc
tf
td(off)
I
V
t
t
IC
VGE
VCE
10%
90%
90%
10%
March 1993
5
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK856-800A Insulated Gate Bipolar Transistor IGBT
BUT11XI Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
BY359-1500 SCREWDRIVER, SENSO PH NO.1 X 80SCREWDRIVER, SENSO PH NO.1 X 80; Tip type:Phillips; Length, blade:80mm; Driver type:Phillips No 1; Handle type:COLOUR CODED; Tip Size:No.1
BY359-1500S SCREWDRIVER, SENSO POZI NO.0 X 60SCREWDRIVER, SENSO POZI NO.0 X 60; Tip type:Pozidriv; Length, blade:60mm; Driver type:Pozidriv No 0; Handle type:COLOUR CODED; Tip Size:No.0
BY428 PUBLICATIONS, BOOKS RoHS Compliant: NA
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