參數(shù)資料
型號： BUK856-800
廠商： NXP Semiconductors N.V.
英文描述： Insulated Gate Bipolar Transistor IGBT
中文描述： 絕緣柵雙極晶體管IGBT的
文件頁數(shù)： 2/7頁
文件大?。?/td> 60K
代理商： BUK856-800
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CES
Collector-emitter breakdown
voltage
Gate threshold voltage
Zero gate voltage collector
current
Zero gate voltage collector
current
Reverse collector current
Gate emitter leakage current
Collector-emitter saturation
voltage
V
GE
= 0 V; I
C
= 0.25 mA
800
-
-
V
V
GE(TO)
I
CES
V
CE
= V
GE
; I
C
= 1 mA
V
CE
= 800 V; V
GE
= 0 V; T
j
= 25 C
3
-
4
10
5.5
200
V
μ
A
I
CES
V
CE
= 800 V; V
GE
= 0 V; T
j
=125 C
-
0.2
1
mA
I
ECS
I
GES
V
CEsat
V
CE
= -5 V; V
GE
= 0 V
V
GE
=
±
30 V; V
CE
= 0 V
V
GE
= 15 V; I
C
= 12 A
V
GE
= 15 V; I
C
= 24 A
-
-
-
-
0.1
10
2.4
3.1
5
mA
nA
V
V
100
3.5
-
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fe
C
ies
C
oes
C
res
t
d on
t
r
E
on
t
d off
t
f
E
off
t
d on
t
r
E
on
t
d off
t
f
E
off
Forward transconductance
V
CE
= 15 V; I
C
= 6 A
V
GE
= 0 V; V
CE
= 25 V; f = 1 MHz
3
7
-
S
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
900
85
30
1250
120
50
pF
pF
pF
Turn-on delay time
Turn-on rise time
Turn-on Energy Loss
I
C
= 12 A; V
CC
= 500 V;
V
GE
= 15 V; R
G
= 25
;
T
j
= 25C;
Inductive Load
Energy Losses include all ’tail’
losses
-
-
-
25
45
0.6
-
-
-
ns
ns
mJ
Turn-off delay time
Turn-off fall time
Turn-off Energy Loss
-
-
-
230
200
0.5
350
400
1
ns
ns
mJ
Turn-on delay time
Turn-on rise time
Turn-on Energy Loss
I
C
= 12 A; V
CC
= 500 V;
V
GE
= 15 V; R
G
= 25
;
T
j
= 125C;
Inductive Load
Energy Losses include all ’tail’
losses
-
-
-
25
45
0.6
-
-
-
ns
ns
mJ
Turn-off delay time
Turn-off fall time
Turn-off Energy Loss
-
-
-
300
400
1
450
800
2
ns
ns
mJ
March 1993
2
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK856-800A Insulated Gate Bipolar Transistor IGBT
BUT11XI Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
BY359-1500 SCREWDRIVER, SENSO PH NO.1 X 80SCREWDRIVER, SENSO PH NO.1 X 80; Tip type:Phillips; Length, blade:80mm; Driver type:Phillips No 1; Handle type:COLOUR CODED; Tip Size:No.1
BY359-1500S SCREWDRIVER, SENSO POZI NO.0 X 60SCREWDRIVER, SENSO POZI NO.0 X 60; Tip type:Pozidriv; Length, blade:60mm; Driver type:Pozidriv No 0; Handle type:COLOUR CODED; Tip Size:No.0
BY428 PUBLICATIONS, BOOKS RoHS Compliant: NA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK856-800A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Insulated Gate Bipolar Transistor IGBT
BUK866-400IZ 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
BUK866-400IZT/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | SOT-404
BUK9006-55A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel Enhancement mode field-effect power Transistor
BUK9107-40ATC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | SOT-426
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*