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參數(shù)資料
| 型號： | BUK556-60H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 53K |
| 代理商： | BUK556-60H |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK556-60A
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 50 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 25 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
20
40
QG / nC
60
80
VGS / V
BUK5y6-60A
10
9
8
7
6
5
4
3
2
1
0
VDS / V =12
48
20
40
60
80
100
Tmb / C
120
140
160
180
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSDS / V
2
IF / A
BUK5y6-60A
200
150
100
50
0
Tj / C = 25
150
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
April 1993
5
Rev 1.100
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| BUK562-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
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| BUK563-48C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Voltage clamped logic level FET |
| BUK563-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
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