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參數(shù)資料
| 型號(hào)： | BUK556-60H |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 53K |
| 代理商： | BUK556-60H |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK556-60A
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 15 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
VGS / V
ID / A
BUK5y6-60A
150
100
50
0
Tj / C = 25
150
-60
-20
20
60
100
140
180
Tj / C
VGS(TO) / V
2
1
0
max.
typ.
min.
0
20
40
60
80
100
ID / A
gfs / S
BUK5y6-60A
40
35
30
25
20
15
10
5
0
0
0.4
0.8
1.2
1.6
2
2.4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
2 %
typ
98 %
-60
-20
20
60
100
140
180
Tj / C
Normalised RDS(ON) = f(Tj)
2.0
1.5
1.0
0.5
0
a
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK5y6-60A
April 1993
4
Rev 1.100
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