參數(shù)資料
型號(hào)： BUK542-60A
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： PowerMOS transistor Logic level FET
中文描述： 9.2 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 57K
代理商： BUK542-60A
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK542-60A/B
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
60
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 60 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
15 V; V
DS
= 0 V
V
GS
= 5 V;
I
D
1.0
-
-
-
-
-
1.5
1
0.1
10
0.12
0.15
2.0
10
1.0
100
0.15
0.18
V
μ
A
mA
nA
BUK542-60A
BUK542-60B
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 8.5 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
5
-
-
-
-
-
-
-
-
TYP.
6.7
400
150
65
12
60
50
45
4.5
MAX.
-
600
200
100
18
80
70
70
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 5 V; R
GS
= 50
;
R
gen
= 50
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
-
12
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
9.2
UNIT
A
-
I
F
= 9.2 A ; V
GS
= 0 V
I
F
= 9.2 A; -dI
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
37
1.7
-
-
A
V
ns
μ
C
1.3
60
0.15
August 1994
2
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK542-60B PowerMOS transistor Logic level FET
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BUK545-200B RP20 (FW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 4:1 Wide Input Voltage Range; 20 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63??C; Standard 2? x 1? Package and Pinning; Efficiency to 86%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK542-60B 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
BUK543-100A 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
BUK543-100B 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
BUK543-50A 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK543-50B 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N-Channel Enhancement MOSFET
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