- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375403 > BUK436-800B (NXP SEMICONDUCTORS) PowerMOS transistor PDF資料下載
參數(shù)資料
| 型號： | BUK436-800B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 3.5 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 69K |
| 代理商： | BUK436-800B |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK436W-800A/B
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
800
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 800 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 800 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
DS
= 0 V
V
GS
= 10 V;
I
D
2.1
-
-
-
-
-
3.0
2
0.1
10
2.7
3.5
4.0
20
1.0
100
3.0
4.0
V
μ
A
mA
nA
BUK436-800A
BUK436-800B
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 1.5 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
3.0
-
-
-
-
-
-
-
-
TYP.
4.3
1000
80
30
10
25
130
40
5
MAX.
-
1250
120
50
25
40
150
60
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 2.3 A;
V
GS
= 10 V; R
GS
= 50
;
R
gen
= 50
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
5
-
nH
L
s
Internal source inductance
-
12.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
4.0
UNIT
A
-
I
F
= 4.0 A ; V
GS
= 0 V
I
F
= 4.0 A; -dI
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 100 V
-
-
-
-
-
16
1.3
-
-
A
V
ns
μ
C
1.0
1800
12
February 1998
2
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK438-1000A | PowerMOS transistor |
| BUK438-1000B | PowerMOS transistor |
| BUK438W-800A | RECTIFIER BRIDGE 8A 100V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE |
| BUK438W-800B | RECTIFIER BRIDGE 8A 200V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE |
| BUK438-800A | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK436W1000B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK436W-1000B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK436W200A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK436W-200A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK436W200B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。