參數(shù)資料
型號: BUK213-50Y
廠商: NXP SEMICONDUCTORS
元件分類: 外設及接口
英文描述: POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
中文描述: 3.6 A BUF OR INV BASED PRPHL DRVR, PSSO4
封裝: PLASTIC, SOT-426, D2PAK-5
文件頁數(shù): 9/16頁
文件大?。?/td> 116K
代理商: BUK213-50Y
Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET
Product data
Rev. 02 — 06 June 2002
9 of 16
9397 750 09384
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Dynamic characteristics
V
IG
= 5 V;
40
°
C
T
j
+150
°
C
Fig 11. Battery-load threshold voltage as a function of battery-ground voltage.
03pa40
0
10
20
30
0
10
20
30
40
50
max
typ
min
VBG (V)
VBL(TO)
(V)
Table 7:
T
mb
= 25
°
C; V
BG
= 13 V; resistive load R
L
= 13
.
Figure 13
Symbol
Parameter
Turn-on measured from the input going HIGH
t
d(on)
turn-on delay time
dV/dt
on
rising slew rate
t
on
turn-on switching time
Turn-off measured from the input going LOW
t
d(off)
turn-off delay time
dV/dt
off
falling slew rate
t
off
turn-off switching time
Switching characteristics
Conditions
Min
Typ
Max
Unit
to 10% V
L
30 to 70% V
L
to 90% V
L
-
-
-
50
0.5
85
80
1.0
160
μ
s
V/
μ
s
μ
s
to 90% V
L
70 to 30% V
L
to 10% V
L
-
-
-
50
0.8
70
80
1.2
120
μ
s
V/
μ
s
μ
s
Table 8:
Limits are valid for
40
°
C
T
mb
+150
°
C and typical values for T
mb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Conditions
Measured from when the input goes HIGH
t
d(sc)
short circuit response time
V
BL
> V
BL(TO)
;
Figure 16
t
d(lc)
low current detect response time
I
L
< I
L(LC)
;
Figure 15
Status response times
Min
Typ
Max
Unit
-
-
180
200
250
-
μ
s
μ
s
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