參數(shù)資料
型號(hào)： BUK101-50GS
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
中文描述： 80 A BUF OR INV BASED PRPHL DRVR, PSFM3
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 110K
代理商： BUK101-50GS
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK101-50GS
TRANSFER CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
g
fs
Forward transconductance
CONDITIONS
V
DS
= 10 V; I
DM
= 13 A t
p
≤
300
μ
s;
δ
0.01
V
DS
= 13 V; V
IS
= 10 V
MIN.
10
TYP.
16
MAX.
-
UNIT
S
I
D(SC)
Drain current
1
-
80
-
A
SWITCHING CHARACTERISTICS
T
mb
= 25 C. R
I
= 50
. Refer to waveform figures and test circuits.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
t
r
t
d off
t
f
t
d on
t
r
t
d off
t
f
Turn-on delay time
V
DD
= 13 V; V
IS
= 10 V
resistive load R
L
= 2.1
V
DD
= 13 V; V
IS
= 0 V
resistive load R
L
= 2.1
V
DD
= 10 V; V
IS
= 10 V
inductive load I
DM
= 6 A
V
DD
= 10 V; V
IS
= 0 V
inductive load I
DM
= 6 A
-
1.5
-
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
Rise time
-
6
-
Turn-off delay time
-
18
-
Fall time
-
9
-
Turn-on delay time
-
2
-
Rise time
-
1
-
Turn-off delay time
-
22
-
Fall time
-
1
-
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb
≤
25 C; V
IS
= 0 V
-
29
A
REVERSE DIODE CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDS
t
rr
Forward voltage
I
S
= 29 A; V
IS
= 0 V; t
p
= 300
μ
s
not applicable
2
-
1.0
1.5
V
Reverse recovery time
-
-
-
-
ENVELOPE CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
L
d
Internal drain inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
3.5
-
nH
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
1
During overload before short circuit load protection operates.
2
The reverse diode of this type is not intended for applications requiring fast reverse recovery.
January 1993
4
Rev 1.200
相關(guān)PDF資料
PDF描述
BUK101-50 PowerMOS transistor Logic level TOPFET
BUK105-50L N-Channel Enhancement MOSFET
BUK105-50LP TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 26A I(D) | SOT-263
BUK105-50S N-Channel Enhancement MOSFET
BUK105-50SP TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 26A I(D) | SOT-263
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK101-50GS,127 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK102-50DL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK102-50GL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK102-50GS 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET
BUK104-50L 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
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