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參數(shù)資料
| 型號(hào)： | BUK101-50GS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
| 中文描述： | 80 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | BUK101-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK101-50GS
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected power MOSFET
in a 3 pin plastic envelope, intended
as a general purpose switch for
automotive systems and other
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
D
T
j
R
DS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
50
29
75
150
50
V
A
W
C
m
APPLICATIONS
V
IS
= 10 V
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
10 V input level
Low threshold voltage
also allows 5 V control
Control of power MOSFET
and supply of overload
protection circuits
derived from input
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
tab
drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
1 2 3
tab
P
D
S
I
TOPFET
January 1993
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK101-50 | PowerMOS transistor Logic level TOPFET |
| BUK105-50L | N-Channel Enhancement MOSFET |
| BUK105-50LP | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 26A I(D) | SOT-263 |
| BUK105-50S | N-Channel Enhancement MOSFET |
| BUK105-50SP | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 26A I(D) | SOT-263 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK101-50GS,127 | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK102-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK102-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK102-50GS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
| BUK104-50L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
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