參數(shù)資料
型號(hào): BUK101-50GL
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
中文描述: BUF OR INV BASED PRPHL DRVR, PSFM3
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 6/11頁(yè)
文件大?。?/td> 104K
代理商: BUK101-50GL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK101-50GL
Fig.8. Typical on-state resistance, T
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
IS
; t
p
= 250
μ
s
Fig.9. Typical transfer characteristics, T
= 25 C.
I
D
= f(V
IS
) ; conditions: V
DS
= 10 V; t
p
= 250
μ
s
Fig.10. Typical transconductance, T
= 25 C.
g
fs
= f(I
D
); conditions: V
DS
= 10 V; t
p
= 250
μ
s
Fig.11. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25 C = f(T
j
); I
D
= 13 A; V
IS
= 5 V
Fig.12. Typical overload protection characteristics.
t
d sc
= f(P
DS
); conditions: V
IS
4 V; T
j
= 25 C.
Fig.13. Normalised limiting overload dissipation.
P
DSM
% =100
P
DSM
/P
DSM
(25 C) = f(T
mb
)
0
20
40
60
80
ID / A
RDS(ON) / ohm
BUK101-50GL
0.20
0.15
0.10
0.05
0
6 V
5 V
( 3 V )
VIS = 4 V
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
2
4
VIS / V
ID / A
BUK101-50GL
50
40
30
20
10
0
OVERLOAD
PROTECTION
LATCHED
NORMAL
RESET
1
3
5
0.1
1
10
PDS / kW
td sc / ms
BUK101-50GL
100
10
1
0.1
PDSM
0
20
40
60
ID / A
gfs / S
BUK101-50GL
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10
30
50
-60
-40
-20
0
20
40
Tmb / C
60
80
100
120
140
PDSM%
120
100
80
60
40
20
0
January 1993
6
Rev 2.600
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參數(shù)描述
BUK101-50GL,127 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK101-50GL/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 TOPFET 5POLIG
BUK101-50GS 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK101-50GS,127 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK102-50DL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET