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參數(shù)資料
| 型號(hào)： | BUK100-50GS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| 中文描述： | 40 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | BUK100-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK100-50GS
Fig.8. Typical on-state resistance, T
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
IS
; t
p
= 250
μ
s
Fig.9. Typical transfer characteristics, T
= 25 C.
I
D
= f(V
IS
) ; conditions: V
DS
= 10 V; t
p
= 250
μ
s
Fig.10. Typical transconductance, T
= 25 C.
g
fs
= f(I
D
); conditions: V
DS
= 10 V; t
p
= 250
μ
s
Fig.11. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25 C = f(T
j
); I
D
= 7.5 A; V
IS
= 5 V
Fig.12. Typical overload protection characteristics.
t
d sc
= f(P
DS
); conditions: V
IS
≥
5 V; T
j
= 25 C.
Fig.13. Normalised limiting overload dissipation.
P
DSM
% =100
P
DSM
/P
DSM
(25 C) = f(T
mb
)
0
20
40
ID / A
BUK100-50GS
0.20
0.15
0.10
0.05
0
6
8
10
7
9
5
4
RDS(ON) / Ohm
VIS / V =
10
30
50
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
2
4
6
8
10
12
BUK100-50GS
VIS / V
ID / A
60
50
40
30
20
10
0
0.01
1
PDS / kW
td sc / ms
BUK100-50GS
100
10
1
0.1
0.1
PDSM
0
20
40
ID / A
gfs / S
BUK100-50GS
12
11
10
9
8
7
6
5
4
3
2
1
0
10
30
50
-60
-40
-20
0
20
40
Tmb / C
60
80
100
120
140
PDSM%
120
100
80
60
40
20
0
November 1996
6
Rev 1.300
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| BUK101-50DL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK101-50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50GL | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK101-50GL,127 | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK101-50GL/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 TOPFET 5POLIG |
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