參數(shù)資料
型號(hào): BUK100-50GL
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
中文描述: 13.5 A, 50 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 7/11頁(yè)
文件大?。?/td> 122K
代理商: BUK100-50GL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
Fig.14. Typical overload protection characteristics.
Conditions: V
DD
= 13 V; V
IS
= 5 V; SC load = 30 m
Fig.15. Typical clamping characteristics, 25 C.
I
D
= f(V
DS
); conditions: V
IS
= 0 V; t
p
50
μ
s
Fig.16. Input threshold voltage.
V
IS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= 5 V
Fig.17. Typical DC input characteristics.
I
IS
= f(V
IS
); normal operation, parameter: T
j
Fig.18. Typical DC input characteristics, T
j
= 25 C.
I
ISL
= f(V
IS
); overload protection operated
I
D
= 0 A
Fig.19. Typical reverse diode current, T
= 25 C.
I
S
= f(V
SDS
); conditions: V
IS
= 0 V; t
p
= 250
μ
s
-60
-20
20
60
100
140
180
220
Tmb / C
Energy & Time
BUK100-50GL
1
0.5
0
Energy / J
Time / ms
Tj(TO)
0
2
4
6
8
10
VIS / V
IIS / uA
BUK100-50GL
500
400
300
200
100
0
150 C
25 C
50
60
70
BUK100-50GL
VDS / V
ID / A
20
15
10
5
0
typ.
0
2
4
6
8
VIS / V
IISL / mA
BUK100-50GL
3
2
1
0
RESET
PROTECTION LATCHED
NORMAL
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VIS(TO) / V
2
1
0
max.
typ.
min.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
BUK100-50GL
VSD / V
IS / A
60
50
40
30
20
10
0
November 1996
7
Rev 1.300
相關(guān)PDF資料
PDF描述
BUK100-50GS PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET)
BUK101-50DL PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
BUK101-50GL PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
BUK101-50GS PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
BUK101-50 PowerMOS transistor Logic level TOPFET
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