參數(shù)資料
型號: BUJ301AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 0.5 A, 500 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, FULL PACK-3
文件頁數(shù): 3/4頁
文件大?。?/td> 21K
代理商: BUJ301AX
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ301AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
August 1998
3
Rev 1.000
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相關代理商/技術參數(shù)
參數(shù)描述
BUJ302 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
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BUJ302A,127 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ302AD 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 1050V DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:66; No. of Pins:3 ;RoHS Compliant: Yes
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