- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375402 > BUJ301AX (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | BUJ301AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 0.5 A, 500 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | BUJ301AX |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ301AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
-
12
-
pF
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 5 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 0.1 A;I
B
= 10 mA
I
C
= 0.2 A;I
= 20 mA
I
C
= 10 mA; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
0.1
1.0
UNIT
mA
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
1
-
mA
V
500
V
CEsat
V
BEsat
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
-
-
0.8
1.0
35
V
V
10
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 0.2 A; I
= -I
= 20 mA;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
-
-
1.0
4.0
0.8
μ
s
μ
s
μ
s
I
= 0.2 A; I
Bon
= 20 mA; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
1.5
160
μ
s
ns
145
I
= 0.2 A; I
Bon
= 20 mA; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
-
-
1.8
200
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUJ301A | Silicon Diffused Power Transistor |
| BUJ101A | Silicon Diffused Power Transistor |
| BUJ302 | Silicon Diffused Power Transistor |
| BUJ304AX | Silicon Diffused Power Transistor |
| BUJ304A | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUJ302 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ302A | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 1050V TO220 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.05kV; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:66; No. of Pins:3 ;RoHS Compliant: Yes |
| BUJ302A,127 | 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ302AD | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 1050V DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:66; No. of Pins:3 ;RoHS Compliant: Yes |
| BUJ302AD,118 | 功能描述:兩極晶體管 - BJT NPN 400 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。