- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375402 > BUJ204AX (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor PDF資料下載
參數(shù)資料
| 型號： | BUJ204AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 107K |
| 代理商： | BUJ204AX |
August 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ204AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 C
V
CBO
= V
CESMmax
(850V)
V
CEO
= V
CEOMmax
(450V)
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
CBO
I
CEO
Collector cut-off current
1
-
-
-
-
0.1
0.1
mA
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
V
EB
= 9 V; I
= 0 A
I
C
= 100 mA;
L = 25 mH
I
C
= 4 A; I
B
= 0.8 A
I
C
= 4 A; I
= 0.8 A
I
C
= 5 mA; V
= 5 V
I
C
= 500 mA; V
CE
= 5 V
I
C
= 2.5 A; V
= 5 V
I
C
= 4 A; V
CE
= 5 V
-
-
-
0.1
-
mA
V
450
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.29
1.01
19
25
17
12
1.5
1.3
35
35
19.5
-
V
V
10
14
14.5
-
DC current gain
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 2.5 A; I
= -I
= 0.5 A;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
0.57
3.4
0.34
0.8
4
0.47
μ
s
μ
s
μ
s
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
1.37
88
1.5
150
μ
s
ns
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
-
-
1.6
200
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUJ204A | Silicon Diffused Power Transistor |
| BUJ205AX | Silicon Diffused Power Transistor |
| BUJ205A | Silicon Diffused Power Transistor |
| BUJ301AX | Silicon Diffused Power Transistor |
| BUJ301A | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUJ205A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ205AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ301A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ301AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ302 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。