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參數(shù)資料
| 型號(hào)： | BUJ100AT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-223, 4 PIN |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | BUJ100AT |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100AT
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for
use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and
inverters.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FE
t
fi
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.23
14
50
MAX.
700
700
400
1.0
2.0
6
1.0
20
70
UNIT
V
V
V
A
A
W
V
T
sp
≤
25 C
I
C
= 0.75 A;I
B
= 150 mA
I
C
= 0.75 A;V
CE
= 5 V
I
C
= 1.0 A,I
BON
=200 mA
Fall time (Inductive)
ns
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
4
collector (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
1.0
2.0
0.5
1.0
6
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
sp
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
PARAMETER
Junction to solder point
Junction to ambient
CONDITIONS
TYP.
-
MAX.
20
UNIT
K/W
pcb mounted pad areas as in Fig.
23)
pcb mounted, minimum footprint
Mounted on 50x34x2mm
aluminium PCB
70
-
K/W
30
-
K/W
4
1
2
3
b
c
e
September 1999
1
Rev 1.000
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| BUJ100B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-92 |
| BUJ100B,116 | 功能描述:兩極晶體管 - BJT TAPERA BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ100LR | 制造商:NXP Semiconductors 功能描述:TRANSISTORNPN400V1ATO-92 制造商:NXP Semiconductors 功能描述:TRANSISTOR,NPN,400V,1A,TO-92 制造商:NXP Semiconductors 功能描述:TRANSISTOR,NPN,400V,1A,TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:2.1W; DC Collector Current:1A; DC Current Gain hFE:7.5; No. of Pins:3 ;RoHS Compliant: Yes |
| BUJ100LR,126 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 1A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ100LR,412 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 1A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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