參數(shù)資料
型號: BU508AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 8 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-399, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 63K
代理商: BU508AX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 6.0 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
EBO
V
CEOsus
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
10
-
mA
V
700
V
CEsat
V
BEsat
h
FE
Collector-emitter saturation voltages I
C
= 4.5 A; I
B
= 1.6 A
Base-emitter saturation voltage
DC current gain
-
-
6
-
-
1.0
1.1
30
V
V
-
I
C
= 4.5 A; I
= 2 A
I
C
= 100 mA; V
CE
= 5 V
13
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
f
T
Transition frequency at f = 5 MHz
C
C
Collector capacitance at f = 1MHz
Switching times (16 kHz line
deflection circuit)
CONDITIONS
I
C
= 0.1 A;V
CE
= 5 V
V
CB
= 10 V
I
Csat
= 4.5 A;L
1 mH;C
= 4 nF
I
B(end)
= 1.4 A; L
B
= 6
μ
H; -V
BB
= -4 V;
-I
BM
= 2.25 A
TYP.
7
125
MAX.
-
-
UNIT
MHz
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
6.5
0.7
-
-
μ
s
μ
s
1
Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
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