參數(shù)資料
型號: BU508DX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 8 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-399, 3 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 57K
代理商: BU508DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.5
1.6
0.7
MAX.
1500
700
8
15
45
1.0
-
2.0
-
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
25 C
I
= 4.5 A; I
B
= 1.6 A
f = 16kHz
I
F
= 4.5 A
I
Csat
= 4.5 A; f = 16kHz
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
45
150
150
UNIT
V
V
A
A
A
A
W
C
C
T
hs
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
case
1 2 3
b
c
e
July 1998
1
Rev 1.200
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