參數(shù)資料
型號(hào): BU508AW
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, SOT-429, 3 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 72K
代理商: BU508AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AW
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.10. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.11. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
hs
)
Fig.12. Forward bias safe operating area. T
mb
< 25C
(1) P
line.
(2) Second-breakdown limit (independent of
temperature).
I Region of permissible DC operation.
II Permissible extension for repetitive operation.
BU508AD
0.1
1
10
0.1
1
10
IC = 4.5A
IC = 6A
IC = 3A
VCESAT/V
IB/A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1.0E-5
1.0E-3
1.0E-1
1.0E+1
0.1.0E-07
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
bu508aw
t / s
Zth K/W
D =
tp
tp
T
T
P
D
t
July 1998
4
Rev 1.200
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