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參數(shù)資料
| 型號： | BU508AFI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistors(高電壓快速開關(guān)NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關(guān)晶體管（高電壓快速開關(guān)npn型功率晶體管） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 76K |
| 代理商： | BU508AFI |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU508AFTBTU | 功能描述:兩極晶體管 - BJT NPN Triple Diffused Planar Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BU508AT | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR POWER TRANSISTOR |
| BU508AW | 功能描述:兩極晶體管 - BJT Hi Vltg NPN Pwr transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BU508AW | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-249 |
| BU508AW_0708 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage NPN power transistor for standard definition CRT display |
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