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參數(shù)資料
| 型號： | BU508AF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 61K |
| 代理商： | BU508AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 6.0 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
EBO
V
CEOsus
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
10
-
mA
V
700
V
CEsat
V
BEsat
h
FE
Collector-emitter saturation voltages I
C
= 4.5 A; I
B
= 1.6 A
Base-emitter saturation voltage
DC current gain
-
-
6
-
-
1.0
1.1
30
V
V
-
I
C
= 4.5 A; I
= 2 A
I
C
= 100 mA; V
CE
= 5 V
13
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
f
T
Transition frequency at f = 5 MHz
C
C
Collector capacitance at f = 1MHz
Switching times (16 kHz line
deflection circuit)
CONDITIONS
I
C
= 0.1 A;V
CE
= 5 V
V
CB
= 10 V
I
Csat
= 4.5 A;L
1 mH;C
= 4 nF
I
B(end)
= 1.4 A; L
B
= 6
μ
H; -V
BB
= -4 V;
-I
BM
= 2.25 A
TYP.
7
125
MAX.
-
-
UNIT
MHz
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
6.5
0.7
-
-
μ
s
μ
s
1
Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BU508AF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU508AF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HOCHSPANNUNG BIPOLAR |
| BU508AF_0708 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage NPN power transistor for standard definition CRT display |
| BU508AFI | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BU508AFTBTU | 功能描述:兩極晶體管 - BJT NPN Triple Diffused Planar Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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