參數(shù)資料
型號: BU505F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 2.5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: PLASTIC, TO-220, 3 PIN
文件頁數(shù): 3/12頁
文件大小: 81K
代理商: BU505F
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
ISOLATION CHARACTERISTICS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
isolM
C
isol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
12
1500
V
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
V
BE
= 0
open base
65
1500
700
2
2.5
4
2
4
20
+150
150
V
V
A
A
A
A
A
W
°
C
°
C
see Figs 4 and 5
see Figs 4 and 5
T
h
25
°
C; see Fig.2
Fig.2 Power derating curve.
handbook, halfpage
0
50
Th (
o
C)
100
150
0
40
80
MGK674
Ptot max
(%)
Fig.3 DC current gain; typical values.
T
j
= 25
°
C.
(1) V
CE
= 5 V.
(2) V
CE
= 1 V.
handbook, halfpage
10
2
10
1
1
2
10
1
hFE
IC (A)
10
MGB875
(1)
(2)
相關(guān)PDF資料
PDF描述
BU505 Silicon Diffused Power Transistor(硅擴散功率型晶體管)
BU505D Silicon Diffused Power Transistor(硅擴散功率型晶體管)
BU506F Silicon Diffused Power Transistor(硅擴散功率型晶體管)
BU506DF Silicon Diffused Power Transistor(硅擴散功率型晶體管)
BU506 Silicon diffused power transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BU506 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors
BU-506 制造商:Thomas & Betts 功能描述:
BU506-1 制造商:Thomas & Betts 功能描述:2 BUSHING,RGD/IMC,NM,INSUL,EA
BU506D 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors
BU506DF 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors