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參數(shù)資料
| 型號： | BU505F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 2.5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | PLASTIC, TO-220, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | BU505F |
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
The BU505DF has an integrated
efficiency diode.
APPLICATIONS
Horizontal deflection circuits of
colour television receivers.
PINNING
PIN
DESCRIPTION
1
2
3
base
collector
emitter
mounting base; electrically
isolated from all pins
mb
Fig.1 Simplified outline (SOT186) and symbols.
a. BU505F.
b. BU505DF.
MBC668
1
2
3
Front view
3
2
1
MBB008
3
2
1
MBB077
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
Notes
1.
2.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
V
CEO
V
CEsat
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation
voltage
diode forward voltage
(BU505DF)
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
BE
= 0
open base
I
C
= 2 A; I
B
= 900 mA; see Fig.8
1500
700
1
V
V
V
V
F
I
F
= 2 A
1.8
V
I
Csat
I
C
I
CM
P
tot
t
f
0.7
2
2.5
4
20
A
A
A
W
μ
s
see Figs 4 and 5
see Figs 4 and 5
T
h
≤
25
°
C; see Fig.2
inductive load; see Fig.10
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1
6.35
3.85
55
K/W
K/W
K/W
note 2
R
th j-a
thermal resistance from junction to ambient
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU505 | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU505D | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU506F | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU506DF | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU506 | Silicon diffused power transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU506 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BU-506 | 制造商:Thomas & Betts 功能描述: |
| BU506-1 | 制造商:Thomas & Betts 功能描述:2 BUSHING,RGD/IMC,NM,INSUL,EA |
| BU506D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BU506DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
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