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參數(shù)資料
| 型號(hào)： | BU505D |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 2.5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | BU505D |
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
1
1.3
1.8
0.15
UNIT
V
CEOsust
V
CEsat
V
BEsat
V
EBO
V
F
I
CES
collector-emitter sustaining voltage see Figs 5 and 6
collector-emitter saturation voltage I
C
= 2 A; I
B
= 900 mA
base-emitter saturation voltage
emitter-base voltage
diode forward voltage (BU505D)
collector-emitter cut-off current
700
6
V
V
V
V
V
mA
I
C
= 2 A; I
B
= 900 mA
I
E
= 10 mA; I
C
= 0
I
F
= 2 A
V
CE
= V
CESmax
; V
BE
= 0;
note 1
V
CE
= V
CESmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 100 mA
V
CE
= 5 V; I
C
= 100 mA;
f = 5 MHz
V
CB
= 10 V; I
E
= i
e
= 0;
f = 1 MHz
1
mA
I
EBO
h
FE
f
T
emitter-base cut-off current
DC current gain
transition frequency
6
13
7
1
30
mA
MHz
C
c
collector capacitance
65
pF
Switching times in horizontal deflection circuit
(see Fig.7)
t
s
storage time
I
CM
= 2 A; I
B(end)
= 900 mA;
V
dr
=
4 V
L
B
= 10
μ
H
L
B
= 15
μ
H
L
B
= 25
μ
H
I
CM
= 2 A; I
B(end)
= 900 mA;
V
dr
=
4 V
L
B
= 10
μ
H
L
B
= 15
μ
H
L
B
= 25
μ
H
6.5
7.5
9.5
μ
s
μ
s
μ
s
t
f
fall time
0.9
0.9
0.85
μ
s
μ
s
μ
s
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