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參數(shù)資料
| 型號(hào)： | BU4507DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BU4507DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
T
j
V
= 6 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
B
= 1 mA
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
100
-
μ
A
V
800
BV
EBO
V
CEsat
V
BEsat
h
FE
h
FE
Emitter-base breakdown voltage
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 1 A
Base-emitter saturation voltage
DC current gain
7.5
-
0.84
-
4.2
13.5
-
0.92
12
5.7
-
V
V
V
3.0
1.01
-
7.3
I
C
= 4 A; I
= 1 A
I
C
= 100 mA; V
= 5 V
I
C
= 4 A; V
CE
= 5 V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (56 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 4.0 A;I
B1
= 0.8 A
(I
B2
= -2.0 A)
TYP.
68
MAX.
-
UNIT
pF
3.8
0.30
4.6
0.45
μ
s
μ
s
I
Csat
= 4.0 A;I
B1
= 0.8 A
(I
B2
= -2.1 A)
2.4
0.21
-
-
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.100
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