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參數(shù)資料
| 型號(hào)： | BU4507 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 擴(kuò)散硅功率晶體管 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | BU4507 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507AF
Fig.7. High and low DC current gain.
Fig.8. Test Circuit RBSOA.
Fig.9. Reverse bias safe operating area. T
j
≤
T
jmax
Fig.10. Typical collector-emitter saturation voltage.
Fig.11. Typical base-emitter saturation voltage.
Fig.12. Typical collector storage and fall time.
I
C
=4 A; T
j
= 85C; f = 16kHz
1
0.01
0.1
1
10
10
100
BU4507AF
Ths = 25 C
VCE = 5V
hFE
IC / A
0.1
1
10
100
0.01
0.1
1
10
IC/IB = 5
Ths = 25 C
Ths = 85 C
BU4507AF/X/Z
VCEsat / V
IC / A
0
0.5
1
1.5
2
2.5
3
0.6
0.7
0.8
0.9
1
1.1
1.2
Ths = 25 C
Ths = 85 C
IC = 4 A
VBEsat / V
IB / A
BU4507AF/X/Z
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
ts
tf
ts/tf / us
IB / A
100
0
10
20
30
VCE / V
IC / A
BU2507
1500
1000
August 1998
4
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU4507AF | Silicon Diffused Power Transistor |
| BU4507AX | Silicon Diffused Power Transistor |
| BU4507DF | Silicon Diffused Power Transistor |
| BU4522AF | Silicon Diffused Power Transistor |
| BUJ100AT | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4507AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4507AX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU4507AZ | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4507DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4507DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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